mixers - double-balanced - chip 4 4 - 78 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc560 gaas mmic fundamental mixer, 24 - 40 ghz v01.0408 general description features functional diagram wide if bandwidth: dc - 18 ghz input ip3: +21 dbm high lo/rf isolation: 35 db passive double balanced topology compact size: 1.15 x 0.78 x 0.1 mm electrical speci cations, t a = +25 c, if = 1ghz, lo = +13 dbm* typical applications the hmc560 is ideal for: ? test equipment & sensors ? microwave point-to-point radios ? point-to-multi-point radios ? military & space the hmc560 chip is a miniature passive double bal- anced mixer which is fabricated in a gaas mesfet process, and can be used as an upconverter or down- converter from 24-40 ghz in a small chip area. the wide bandwidth allows this device to be used across multiple radio bands with a common platform. excel- lent isolations are provided by on-chip baluns, and the chip requires no external components and no dc bias. measurements were made with the chip mounted and ribbon bonded into in a 50-ohm micro- strip test xture. measured data includes the parasitic effects of the assembly. rf connections to the chip were made with 0.076mm (3-mil) ribbon bond with minimal length <0.31mm (<12 mil). parameter min. typ. max. min. typ. max. units frequency range, rf & lo 24 - 36 36 - 40 ghz frequency range, if dc - 18 dc - 18 ghz conversion loss 8 10 10 13 db noise figure (ssb) 8 10 10 13 db lo to rf isolation 27 35 20 35 db lo to if isolation 29 32 18 db rf to if isolation 17 22 21 33 db ip3 (input) 19 21 dbm ip2 (input) 50 50 dbm 1 db compression (input) 13 15 dbm * unless otherwise noted, all measurements performed as downconverter
mixers - double-balanced - chip 4 4 - 79 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature @ lo = +13 dbm conversion gain vs. lo drive upconverter performance conversion gain @ lo = +13 dbm isolation @ lo = +13 dbm if bandwidth @ lo = +13 dbm -20 -15 -10 -5 0 24 26 28 30 32 34 36 38 40 42 44 +25 c +85 c -55 c conversion gain (db) rf frequency (ghz) -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 conversion gain if return loss response (db) frequency (ghz) -20 -15 -10 -5 0 24 26 28 30 32 34 36 38 40 42 44 +7 dbm +9 dbm +11 dbm +13 dbm +15 dbm conversion gain (db) rf frequency (ghz) -20 -15 -10 -5 0 24 26 28 30 32 34 36 38 40 42 conversion gain (db) rf frequency (ghz) -50 -40 -30 -20 -10 0 24 26 28 30 32 34 36 38 40 lo/rf rf/if lo/if isolation (db) frequency (ghz) return loss @ lo = +13 dbm -25 -20 -15 -10 -5 0 24 26 28 30 32 34 36 38 40 rf lo return loss (db) frequency (ghz) hmc560 v01.0408 gaas mmic fundamental mixer, 24 - 40 ghz
mixers - double-balanced - chip 4 4 - 80 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input ip2 vs. temperature @ lo = +13 dbm * input ip3 vs. lo drive * input ip2 vs. lo drive * input ip3 vs. temperature @ lo = +13 dbm * * two-tone input power = -10 dbm each tone, 1 mhz spacing. input p1db vs. temperature @ lo = +13 dbm 0 5 10 15 20 25 24 26 28 30 32 34 36 38 40 +9 dbm +11 dbm +13 dbm +15 dbm iip3 (dbm) rf frequency (ghz) 0 5 10 15 20 24 26 28 30 32 34 36 38 40 +25 c +85 c -55 c p1db (dbm) rf frequency (ghz) 0 10 20 30 40 50 60 70 80 24 26 28 30 32 34 36 38 40 +25 c +85 c -55 c iip2 (dbm) rf frequency (ghz) 0 10 20 30 40 50 60 70 80 24 26 28 30 32 34 36 38 40 +9 dbm +11 dbm +13 dbm +15 dbm iip2 (dbm) rf frequency (ghz) 0 5 10 15 20 25 24 26 28 30 32 34 36 38 40 +25 c +85 c -55 c iip3 (dbm) rf frequency (ghz) 0 5 10 15 20 25 24 26 28 30 32 34 36 38 40 iip3 (dbm) rf frequency (ghz) upconverter performance input ip3 @ lo = +13 dbm hmc560 v01.0408 gaas mmic fundamental mixer, 24 - 40 ghz
mixers - double-balanced - chip 4 4 - 81 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings rf / if input +25 dbm lo drive +23 dbm if dc current 2 ma channel temperature 150 c/w continuous pdiss (t= 85 c ) (derate 14.79 mw/ c above 85 c) 0.961 w thermal resistance (r th ) (channel to die bottom) 67.6 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c notes: 1. all dimensions are in inches [mm]. 2. die thickness is .004. 3. typical bond pad is .004 square. 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside metal is ground. 7. connection not required for unlabeled bond pads. 8. this die is designed for pick-up with vacuum (edge) collet tools. to preclude the risk of permanent damage, no contact to the die surface is allowed within this rectangular area. 9. overall die size is 0.002 die packaging information [1] standard alternate wp-7 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. electrostatic sensitive device observe handling precautions mxn spurious outputs as a down converter nlo mrf0123 0xx-9-13 1-100-40 2-68-55-55-66 3-82-84-66 rf = 24 ghz @ -10 dbm lo = 25 ghz @ +13 dbm all values in dbc below if output power level. hmc560 v01.0408 gaas mmic fundamental mixer, 24 - 40 ghz
mixers - double-balanced - chip 4 4 - 82 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1lo this pad is dc coupled and matched to 50 ohms. 2rf this pad is dc coupled and matched to 50 ohms. 3if this pad is dc coupled. for applications not requiring operation to dc, this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. for operation to dc, this pad must not source/sink more than 2ma of cur- rent or die non-function and possible die failure will result. gnd the backside of the die must be connected to rf/dc ground. pad descriptions assembly drawing hmc560 v01.0408 gaas mmic fundamental mixer, 24 - 40 ghz
mixers - double-balanced - chip 4 4 - 83 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mount ing surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possib le, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc560 v01.0408 gaas mmic fundamental mixer, 24 - 40 ghz
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